The dual SiC MOSFET module combines an 800 A drain-current rating with a 300 kA²s diode I²t rating for demanding power ...
The axial-leaded devices combine 6, 8 and 10 kA surge ratings with stable clamping and MIL-STD-750 screening for demanding ...
The four devices combine 0.2 mA typical channel current with 25 Mbps data rates, 30 kV/μs CMTI and 3,000 Vrms isolation.
Virtual synchronous machines make inverters emulate synchronous generators; SYNDEM architecture scales this approach to 108 ...
Infineon has announced that its radiation-hardened HiRel power devices are integrated on NASA’s Nancy Grace Roman Space ...
The 2U instrument combines two independent channels with ultra-low phase and amplitude modulation noise and calibrated output ...
Microchip's Kevin Speer explains why silicon carbide makes solid-state transformers practical for AI data center power.
The ALATTIS program targets a domestic manufacturing process for 10kV SiC IGBTs and PiN diodes for high-power applications. Navitas Semiconductor has been selected for the ALATTIS (Accelerated, ...
Infineon's PSOC C3 Performance Line adds a PPCA accelerator enabling switching frequencies up to 2 MHz for GaN-based power ...
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